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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.10
- Print publication:
- 2001
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- Article
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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 637 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, E3.10
- Print publication:
- 2000
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- Article
- Export citation